Description: his auction is for a IRGBF30F Transistor N Channel IGBT - TO220 IOR International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT DescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectifier havehigher usable current densities than comparable bipolar transistors, while atthe same time having simpler gate-drive requirements of the familiar powerMOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. Features• Switching-loss rating includes all "tail" losses• Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve Absolute Maximum Ratings Parameter Max. UnitsVCES Collector-to-Emitter Voltage 900 VIC @ TC = 25°C Continuous Collector Current 20IC @ TC = 100°C Continuous Collector Current 11 AICM Pulsed Collector Current 40ILM Clamped Inductive Load Current 40VGE Gate-to-Emitter Voltage ±20 VEARV Reverse Voltage Avalanche Energy 10 mJPD @ TC = 25°C Maximum Power Dissipation 100 WPD @ TC = 100°C Maximum Power Dissipation 42TJ Operating Junction and -55 to +150TSTG Storage Temperature Range °CSoldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Price: 4.99 USD
Location: Elmont, New York
End Time: 2024-08-15T15:13:03.000Z
Shipping Cost: N/A USD
Product Images
Item Specifics
Return shipping will be paid by: Buyer
All returns accepted: Returns Accepted
Item must be returned within: 60 Days
Refund will be given as: Money back or replacement (buyer's choice)
Return policy details:
Type: IGBT
MPN: IRGB14C40LPBF
Brand: International Rectifier
Body: TO220AB
Mounting Type: Through hole
structure: N-Ch
